Radiative Recombination Dynamics of Carriers in InxGa1-xN Epitaxial Layers Revealed by Temperature Dependence of Time-Resolved Photoluminescence Spectra

2000 ◽  
Vol 180 (1) ◽  
pp. 27-31 ◽  
Author(s):  
H. Kudo ◽  
T. Tanabe ◽  
H. Ishibashi ◽  
R. Zheng ◽  
Y. Yamada ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Epitaxial Layers ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Recombination Dynamics

Temperature dependence of time-resolved photoluminescence of bound excitons in CuInS2 crystals

2005 ◽  
Vol 480-481 ◽  
pp. 283-285 ◽  
Author(s):  
K. Wakita ◽  
K. Nishi ◽  
Y. Ohta ◽  
T. Onishi
Keyword(s):  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

scholarly journals Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependence

2019 ◽  
Vol 20 (1) ◽  
pp. 313-323 ◽  
Author(s):  
Thomas Paul Weiss ◽  
Romain Carron ◽  
Max H. Wolter ◽  
Johannes Löckinger ◽  
Enrico Avancini ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Surface Recombination ◽  
Front Surface ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

2009 ◽  
Vol 94 (18) ◽  
pp. 183101 ◽  
Author(s):  
C. H. Lin ◽  
H. S. Lin ◽  
C. C. Huang ◽  
S. K. Su ◽  
S. D. Lin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Spectroscopy ◽  
Quantum Ring ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence in CdIn2S4

1987 ◽  
Vol 65 (3) ◽  
pp. 204-207 ◽  
Author(s):  
S. Charbonneau ◽  
E. Fortin ◽  
J. Beauvais
Keyword(s):  
Single Crystals ◽  
Free Electron ◽  
Continuous Wave ◽  
Time Window ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Spectral Bands ◽  
Window Technique ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Photoluminescence spectra of CdIn2S4 single crystals at 1.8 K under both continuous-wave (CW) and pulsed excitation were obtained. In the latter case, a variable time-window technique was used to observe the time evolution of the spectra between 0 and 100 μs. In contrast to previous studies, four spectral bands were observed under both CW and pulsed, intrinsic or extrinsic excitation. In particular, two bands previously unobserved under extrinsic excitation were detected at 1.35 and 1.68 eV, and have been attributed to donor–acceptor pairs and free-electron to acceptor transitions respectively.

Time-Resolved Photoluminescence Spectra in Single Crystals of CuAlS2:Mn

1991 ◽  
Vol 30 (Part 1, No. 2) ◽  
pp. 307-313 ◽  
Author(s):  
Katsuaki Sato ◽  
Koki Ishii ◽  
Kunio Watanabe ◽  
Kensei Ohe
Keyword(s):  
Single Crystals ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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